Thermal resistance from non-equilibrium phonons at Si–Ge interface

نویسندگان

چکیده

As nanostructured devices become prevalent, interfaces often play an important role in thermal transport phenomena. However, interfacial remains poorly understood due to complex physics across a wide range of length scales from atomistic microscale. Past studies on resistance have focused interface-phonon scattering at the scale but overlooked interplay phonon-interface and phonon-phonon Here, we use Peierls-Boltzmann equation show that non-equilibrium phonons near Si–Ge interface is much larger than directly caused by scattering. We report phonon distribution leads significant entropy generation upon three-phonon Boltzmann's H-theorem. The physical origin Ge explained with mismatches dispersion, density-of-states, group velocity, which serve as general guidance for estimating effect resistance. Our study bridges gap between less studied microscale phenomena, providing comprehensive understanding overall

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ژورنال

عنوان ژورنال: Materials Today Physics

سال: 2023

ISSN: ['2542-5293']

DOI: https://doi.org/10.1016/j.mtphys.2023.101063